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Showing posts with label Transistor Pinouts. Show all posts
Showing posts with label Transistor Pinouts. Show all posts
BC108C PINOUT
NPN TRANSISTOR BC108C PINOUT
package = TO-18
collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 420-800
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 420-800
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
BC108B PINOUT
NPN TRANSISTOR BC108B PINOUT
package = TO-18
collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 200-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 200-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
BC108A PINOUT
NPN TRANSISTOR BC108A PINOUT
package = TO-18
collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 110-220
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 110-220
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
BC108 PINOUT
NPN TRANSISTOR BC108 PINOUT
package = TO-18
collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 110-800
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18collector emitter voltage with base open circuit = 20
collector current = 0.1
hFE forward current gain = 110-800
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
BC107B PINOUT
npn transistor BC107B pinout
package = TO-18
collector emitter voltage with base open circuit = 45
collector current = 0.1
hFE forward current gain = 200-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18
collector emitter voltage with base open circuit = 45
collector current = 0.1
hFE forward current gain = 200-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
bc107 pinout
npn transistor bc107 pinout
package = TO-18
collector emitter voltage with base open circuit = 45
collector current = 0.1
hFE forward current gain = 110-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
package = TO-18collector emitter voltage with base open circuit = 45
collector current = 0.1
hFE forward current gain = 110-450
ft frequency transition (gain bandwidth) = 150 MHZ
power dissipation = 0.3
--------------------------------
01: emitter
02: base
03: collector
2n5551 pinout
transistor pinout
2n5551 pinout
1- emitter
2- base
3- collector
2N5551, TO-92 Plastic-Encapsulate Biploar Transistors
2N5551, NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5551, TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2N5551, Transistor General Purpose TO-92
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PINS
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Transistor Pinouts
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