buz11 datasheet

buz11 datasheet

30A, 50V, 0.040 Ohm, N-Channel Power



MOSFET

This is an N-Channel enhancement mode silicon gate power


field effect transistor designed for applications such as


switching regulators, switching converters, motor drivers,


relay drivers and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


This type can be operated directly from integrated circuits.


Formerly developmental type TA9771.
 
 
Features



• 30A, 50V


• rDS(ON) = 0.040Ω


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Majority Carrier Device


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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